کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
539771 1450393 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Atomic precision patterning on Si: An opportunity for a digitized process
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Atomic precision patterning on Si: An opportunity for a digitized process
چکیده انگلیسی

H depassivation lithography is a process by which a monolayer of H absorbed on a Si(1 0 0) 2 × 1 surface may be patterned by the removal of H atoms using a scanning tunneling microscope. This process can achieve atomic resolution where individual atoms are targeted and removed. This paper suggests that such a patterning process can be carried out as a digital process, where the pixels of the pattern are the individual H atoms. The goal is digital fabrication rather than digital information processing. The margins for the read and write operators appear to be sufficient for a digital process, and the tolerance for physical addressing of the atoms is technologically feasible. A digital fabrication process would enjoy some of the same advantages of digital computation; namely high reliability, error checking and correction, and the creation of complex systems.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issues 5–8, May–August 2010, Pages 955–958
نویسندگان
, , , , , , , ,