Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE

Near infrared light-emitting diode (LED) based on p-NiO/n-InN/n-GaN was realized by plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (rf) magnetron sputtering. The device exhibited diode-like rectifying current-voltage characteristics with a turn-on voltage of 1.0 V. Under forward bias, prominent near infrared (NIR) emissions were observed at peak around 1570 nm at room temperature. The NIR emission was ascribed to the band-edge emission of InN epilayer based on the photoluminescence spectrum and band diagram of the heterojunction. Moreover, the study of the LED in terms of the stability was also discussed.