کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5398446 | 1505883 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1âxSbx type-II superlattices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The temperature-dependent and excitation-dependent photoluminescence (PL) spectroscopy characterization of mid-wavelength infrared InAs/InAs1âxSbx type-II superlattices reveals evidence of carrier localization. Carrier localization is apparent in the 8Â meV PL peak position blue shift from 4Â K to 60Â K while the peak full-width-at-half-maximum is non-monotonic, peaking at 25Â K before increasing above 60Â K. In addition, competition between two recombination processes is evident in the temperature-dependent behavior of the PL peak integrated intensity under low excitation conditions: the intensity decreases from 4Â K to 80Â K, increases from 80Â K to 160Â K, and decreases above 160Â K. Excitation-dependent PL studies reveal the dominant recombination mechanism changes from free-to-bound or donor-acceptor-like recombination to excitonic or band-to-band recombination at ~60Â K. These findings suggest that carrier localization is occurring below 60Â K, and the confined carriers are holes as these are unintentionally doped n-type superlattices. The localization potentials are due to variations in the InAs1âxSbx composition, the interfaces, and the InAs and InAs1âxSbx layer widths. The width of a Gaussian distribution used to describe the density of states of the band tails due to carrier localization potentials ranges from 2Â meV-4Â meV. The larger energy corresponds to the smaller period superlattices, indicating the interface compositional variation is more prominent and creates larger localization potentials than in the longer period superlattices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 178, October 2016, Pages 451-456
Journal: Journal of Luminescence - Volume 178, October 2016, Pages 451-456
نویسندگان
E.H. Steenbergen, J.A. Massengale, G. Ariyawansa, Y.-H. Zhang,