کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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539916 | 871280 | 2007 | 6 صفحه PDF | دانلود رایگان |
In this paper, in order to investigate the electrochemical polishing behavior of the tungsten (W) and titanium (Ti) film, the chemical mechanical polishing (CMP) performances of W and Ti film according to the oxidizer contents were studied through electrochemical corrosion analysis. The alumina (Al2O3)-based tungsten slurry with H2O2 oxidizer was used for CMP test. As an experimental result, for the case of 5 vol% oxidizer added, the removal rates were improved and a good polishing selectivity of 1.4 : 1 was obtained. It means that the oxidizer with the highest removal rate (RR) has a high dissolution rate due to the predominant electrochemical corrosion effects. Therefore we conclude that the W and Ti-CMP characteristics are strongly dependent on the amounts of H2O2 oxidizer additive.
Journal: Microelectronic Engineering - Volume 84, Issue 12, December 2007, Pages 2769–2774