Scintillation response of Ce3+ doped GdGa-LuAG multicomponent garnet films under e-beam excitation

Scintillation properties of multicomponent (GdLuY)3(GaAl)5O12:Ce3+ epitaxial garnet films were studied under electron beam excitation. The role of the shallow traps was investigated using the scintillation decay kinetics and cathodoluminescence spectroscopy. Tunneling-driven recombination, which provides a physical ground for the slow scintillation decay component in LuAG:Ce single crystals, is discussed in detail.