کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5399277 | 1505892 | 2015 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Chemical bath deposited MgxZn1âxS(O) thin films and their photoluminescence properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
A zinc sulfide (ZnS) specimen was intentionally doped with transition metal (Mg-donor) elements using a chemical bath deposition (CBD) technique. Both the un-doped and the magnesium (Mg)-doped ZnS samples were confirmed to have hexagonal wurtzite ZnS crystal structure. The XRD patterns showed no characteristic peak for Mg indicating that the Mg2+ ions had been incorporated into ZnS(O) lattice sites. In contrast to un-doped samples, Mg doping resulted in changes in the morphological features of the spherical clusters which resulted in porous, spongy vermicular structures. The energy band gap of the MgxZn1âxS(O) film was slightly larger than that for the ZnS(O) film. A photoluminescence study revealed that the emissions were near violet-blue-green in color. The emission characteristics consist of two components; emission in the near violet and in visible region. That is the first is between 4160 and 4400Â Ã
and the second is at 5190Â Ã
, and these are associated with the donor-acceptor transitions with sulfur vacancies as acceptors and the magnesium related defects (trap states) in the samples respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 168, December 2015, Pages 98-101
Journal: Journal of Luminescence - Volume 168, December 2015, Pages 98-101
نویسندگان
Akbar I. Inamdar, Jaeseok Han, Yongcheol Jo, Jongmin Kim, S.M. Pawar, Shavkat U. Yuldashev, Hyungsang Kim, Hyunsik Im,