کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
539928 871280 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dependence of electrical properties on interfacial layer of Ta2O5 films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Dependence of electrical properties on interfacial layer of Ta2O5 films
چکیده انگلیسی

The change in the thickness and chemical states of the interfacial layer and the related electrical properties in Ta2O5 films with different annealing temperatures were investigated. The high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the 700 °C-annealed Ta2O5 film remained to be amorphous and had the thinnest interfacial layer which was caused by Ta-silicate decomposition to Ta2O5 and SiO2. In addition, the electrical properties were improved after annealing treatments. Our results suggest that an annealing treatment at 700 °C results in the highest capacitance and the lowest leakage current in Ta2O5 films due to the thinnest interfacial layer and non-crystallization.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 84, Issue 12, December 2007, Pages 2865–2868
نویسندگان
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