Tuning the dielectric properties of hafnium silicate films

The influence of Si concentration in hafnium silicate dielectrics on thermal stability and dielectric permittivity was analyzed. A phase diagram was developed using GIXRD and FTIR measurement. The stabilization of the “higher-k” cubic/tetragonal phase for annealing temperatures up to 1000 °C with a steady increase in capacitance was demonstrated for Hf0.94Si0.06O2 films. It was also shown that the stabilization of nano-crystalline Hf0.80Si0.20O2 films can be realized for annealing temperatures up to 900 °C. The influence of TiN electrodes on the dielectric constant and the leakage current characteristic was also investigated. A permittivity increase for annealing temperatures up to 1000 °C without degradation of leakage current was shown.