The effect of substrate temperatures on the structural, optical and electrical properties of N-Al codoped ZnO thin films

N-Al codoped ZnO thin films were prepared on glass and Si (100) substrates by RF sputtering. The films were deposited at different substrate temperatures ranging from 100 °C to 400 °C. The ZnO (002) peak showed the highest intensity at the substrate temperature of 400  ° C. The prepared films showed good transmission of above 72% in the visible range and the calculated values of energy band gaps were in the range (3.42±0.1-3.54±0.1 eV). Raman Peaks at 273.58 cm−1 and 579.49 cm−1 corresponding to ZnO:N and ZnO:AlN respectively were also observed. The Hall measurements showed that the films deposited at RT and 400 °C exhibit p-type conduction with hole concentrations of 1.52×10+19 cm−3 and 6.3×10+17 cm−3 respectively. The corresponding mobilities were 0.866 cm2 V−1 s−1 and 10.5 cm2 V−1 s−1 respectively.