کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5399418 | 1505905 | 2014 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced UV luminescence from InAlN quantum well structures using two temperature growth
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
InAlN/AlGaN multiple quantum wells (MQWs) emitting between 300 and 350Â nm have been prepared by metalorganic chemical vapor deposition on planar AlN templates. To obtain strong room temperature luminescence from InAlN QWs a two temperature approach was required. The intensity decayed weakly as the temperature was increased to 300Â K, with ratios IPL(300Â K)/IPL(T)max up to 70%. This high apparent internal quantum efficiency is attributed to the exceptionally strong carrier localization in this material, which is also manifested by a high Stokes shift (0.52Â eV) of the luminescence. Based on these results InAlN is proposed as a robust alternative to AlGaN for ultraviolet emitting devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 155, November 2014, Pages 108-111
Journal: Journal of Luminescence - Volume 155, November 2014, Pages 108-111
نویسندگان
Vitaly Z. Zubialevich, Thomas C. Sadler, Duc V. Dinh, Shahab N. Alam, Haoning Li, Pietro Pampili, Peter J. Parbrook,