Luminescence properties of dilute bismide systems

- Measurement of photoluminescence spectra of a home grown series of dilute bismides.
- Fully microscopic calculation of luminescence spectra from detailed band structure.
- Quantitative experiment-theory comparison of luminescence spectra.
- Thorough understanding of optoelectronic properties of dilute bismide material system.
- Promising perspectives for the development of new device applications.

Systematic photoluminescence measurements on a series of GaBixAs1−x samples are analyzed theoretically using a fully microscopic approach. Based on sp3s⁎ tight-binding calculations, an effective k·p model is set up and used to compute the band structure and dipole matrix elements for the experimentally investigated samples. With this input, the photoluminescence spectra are calculated using a systematic microscopic approach based on the semiconductor luminescence equations. The detailed theory-experiment comparison allows us to quantitatively characterize the experimental structures and to extract important sample parameters.