کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5400016 | 1505913 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of n-GaN/MDMO-PPV hybrid structures for optoelectronic devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We fabricated hybrid structures using combined properties of organic and inorganic materials for application in light emitting diode. The hybrid structures were demonstrated using poly[2-methoxy-5-(3â²,7â²-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic materials and n-GaN as inorganic materials. To investigate the effects of organic layer thickness, we changed polymer concentration and spin speed of MDMO-PPV solution. We obtained current rectifying behaviour with MDMO-PPV layer of approximate 60Â nm thickness. The hybrid structure shows broad emissions covering orange range in both photoluminescence and electroluminescence spectra and its band structures matched well with energy band gap of GaN and MDOM-PPV. We expect the potential applications and the enhanced efficiency in optoelectronic devices with hybrid structure by making progress the results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 147, March 2014, Pages 1-4
Journal: Journal of Luminescence - Volume 147, March 2014, Pages 1-4
نویسندگان
Min Jeong Shin, Dong-Oh Gwon, Gang Seok Lee, Hyung Soo Ahn, Sam Nyung Yi, Dong Han Ha,