Evidence of strong acceptor peaks in ZnO thin films doped with phosphorus by plasma immersion ion implantation technique

► Phosphorus-implantation performed on ZnO films in order to achieve p-type doping ► Dominant acceptor-bound exciton peak for the samples, depict p-type conductivity ► Presence of free-electron-to-acceptor and donor-to acceptor peaks for the samples ► Acceptor activation energy of 125 meV is measured ► I-V characteristics exhibited diode-like behavior with a threshold voltage of 3.3 V.