کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540085 | 1450398 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of three-dimensional nanoimprint mold using inorganic resist in low accelerating voltage electron beam lithography
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Three-dimensional (3D) resolution of inorganic resist pattern, which was exposed with control of acceleration voltage electron beam lithography (CAV-EBL) in low accelerating voltage was examined. The system can make features with varying developed-depths. Three-dimensional pattern with a few hundred nanometer linewidth was fabricated with a CAV-EBL. The pattern depths on inorganic resist were gradated with 5 nm depth-resolution per 30 V. By controlling the pattern depth, a seven stairs blade-shaped binary optics mold was fabricated, and then a replica pattern of the mold was made by using UV-NIL.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 84, Issues 5–8, May–August 2007, Pages 912–915
Journal: Microelectronic Engineering - Volume 84, Issues 5–8, May–August 2007, Pages 912–915
نویسندگان
Yoshiaki Ishii, Jun Taniguchi,