Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode

► The n-ZnO/p-NiO heterojunction was prepared by rf magnetron sputtering. ► The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of ∼3.6 V. ► The heterojunction realizes UV EL emission with wavelength of 387 nm at the injection current of 3.5 mA.