کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540125 | 1450398 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
LER evaluation of molecular resist for EUV lithography
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: LER evaluation of molecular resist for EUV lithography LER evaluation of molecular resist for EUV lithography](/preview/png/540125.png)
چکیده انگلیسی
We have designed and synthesized a molecular resist material, which has no distribution of the protecting groups and have evaluated its performance as a molecular resist with EB and EUV exposure tool. The molecular resist attained a resolution of sub-45 nm patterning at an exposure dose of 12 mJ/cm2. It was found that controlling the distribution of the protecting groups in a molecular resist material has a great impact on improving line edge roughness (LER). Low LER values of 3.1 nm (inspection length: L = 620 nm) and 3.6 nm (L = 2000 nm) were achieved with this molecular resist using Extreme UltraViolet (EUV) lithography tool.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 84, Issues 5–8, May–August 2007, Pages 1084–1087
Journal: Microelectronic Engineering - Volume 84, Issues 5–8, May–August 2007, Pages 1084–1087
نویسندگان
Daiju Shiono, Hideo Hada, Hiroto Yukawa, Hiroaki Oizumi, Iwao Nishiyama, Kyoko Kojima, Hiroshi Fukuda,