کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540145 871289 2006 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Nanomechanical analyses of porous SiO2 low-dielectric-constant films for evaluation of interconnect structure reliability
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Nanomechanical analyses of porous SiO2 low-dielectric-constant films for evaluation of interconnect structure reliability
چکیده انگلیسی

Porous SiO2 low-dielectric-constant films containing different porosities and sizes of uniformly distributed pores were prepared in this study. Their nanomechanical properties including true flow stress and fracture toughness were analyzed by a nanoindentation test. The hardness and elastic modulus of the films prepared with an ethanol molar ratio of 3 and an aging time of 16 h reached maximum values of 2.4 and 40 GPa, respectively. With increasing ethanol molar ratio, the porosity increased, and the mechanical properties consequently decreased. With increasing aging time, the mechanical properties increased and then dropped due to enlarged pore sizes. From converted true flow stress, the porous SiO2 films were found to yield at an ultimate stress of 3.1 GPa, and the maximum fracture energy release rate was calculated as 3.4 J/m2. The plastic deformation and fracture behavior of the porous films was observed through crack initiation and propagation along the large amount of pores.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 83, Issue 10, October 2006, Pages 1940–1949
نویسندگان
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