Structural and optical properties of Ge nanocrystals obtained by hot ion implantation into SiO2 and further ion irradiation

► Optical and structural properties of Ge nanocrystals obtained by hot implantation in SiO2 films were investigated. ► Hot implanted samples have a highest PL yield and different size distribution of nanoparticles. ► PL behavior and structural properties of ion irradiated and further annealed samples were investigated. ► Even after the highest ion irradiation fluence (2×1015 Si/cm2) there is a residual PL emission. ► Surviving Ge nanocrystals are still observed by transmission electron microscopy.