The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes

► We examine the effect of junction temperature on the optoelectrical properties. ► Not only the band-filling effect but also the quantum confinement effect. ► Piezoelectric polarization and the spontaneous polarization in InGaN/GaN structures. ► Carrier transport was responsible for the influences on the optoelectrical characteristics.