Characterization of AlxGa1−xAs/GaAs heterostructures for single quantum wells grown by a solid arsenic MOCVD system

► This work is reported the growth of AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructures by a solid arsenic based MOCVD system. ► The results obtained with this system are comparable with those obtained with the traditional arsine based growth system. ► The main limitation of the alternative MOCVD system is related to the lack of monoatomic hydrogen on the growth surface that acts modifying the surface kinetics and enhancing the carbon incorporation. ► The experimental results indicate that it can be grown AlxGa1-xAs using elemental arsenic by MOCVD, which can be used to optoelectronic devices.