کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5402092 1392726 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Radiative recombination of indirect exciton in type-II ZnSeTe/ZnSe multiple quantum wells
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Radiative recombination of indirect exciton in type-II ZnSeTe/ZnSe multiple quantum wells
چکیده انگلیسی
The tunability of the emission energy, oscillator strength and photoluminescence (PL) efficiency by varying the well thickness and excitation density was demonstrated in the ZnSe0.8Te0.2/ZnSe multiple quantum wells. A significant blueshift about 260 meV of the PL peak energy was observed as the well width decreased from 5 to 1 nm. An extraordinary long lifetime (300 ns) of the recombination for the widest sample was detected. The binding energy of the indirect excitons is determined as 12 meV for the thinnest sample. The reduction of PL efficiency by thermal energy is greatly suppressed by employing a high excitation power.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 131, Issue 5, May 2011, Pages 956-959
نویسندگان
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