کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5402092 | 1392726 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radiative recombination of indirect exciton in type-II ZnSeTe/ZnSe multiple quantum wells
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The tunability of the emission energy, oscillator strength and photoluminescence (PL) efficiency by varying the well thickness and excitation density was demonstrated in the ZnSe0.8Te0.2/ZnSe multiple quantum wells. A significant blueshift about 260Â meV of the PL peak energy was observed as the well width decreased from 5 to 1Â nm. An extraordinary long lifetime (300Â ns) of the recombination for the widest sample was detected. The binding energy of the indirect excitons is determined as 12Â meV for the thinnest sample. The reduction of PL efficiency by thermal energy is greatly suppressed by employing a high excitation power.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 131, Issue 5, May 2011, Pages 956-959
Journal: Journal of Luminescence - Volume 131, Issue 5, May 2011, Pages 956-959
نویسندگان
Chin-Hau Chia, Wen-Chung Fan, Yen-Chen Lin, Wu-Ching Chou,