Analysis of minority carrier diffusion length in SiC toward high quality epitaxial growth

Homoepitaxy of 4H-SiC grown by a horizontal hot-wall chemical vapor deposition and the minority carrier diffusion length were studied. With the addition of HCl during the etching and the epitaxy, an optimum growth window on the (0001¯) C face became wide. Minority carrier diffusion length in SiC epilayers was evaluated by a line-scanning electron-beam-induced current method.