کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540225 871294 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis of bulk and surface components of leakage current in 4H-SiC PiN MESA diodes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Analysis of bulk and surface components of leakage current in 4H-SiC PiN MESA diodes
چکیده انگلیسی

The leakage current in circular- and ring-shaped epitaxial 4H-SiC PiN mesa diodes with different size and periphery to area ratios was evaluated under the influence of the UV irradiation and temperature in the range from room temperature (RT) to 250 °C. The surface leakage current component was found to dominate the reverse current characteristics and was found to be dependent on time and temperature both after reactive ion etching (RIE) of the diodes in the SF6/Ar gas mixture and after the UV irradiation. Charging of the surface states is believed to be responsible for the observed behavior. The UV irradiation is believed to charge the surface positively. The drift of the I(V) characteristics is due to the trapping of the electrons neutralizing the positive donor states.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 83, Issue 1, January 2006, Pages 75–78
نویسندگان
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