کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540234 871294 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Normally-off trench JFET technology in 4H silicon carbide
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Normally-off trench JFET technology in 4H silicon carbide
چکیده انگلیسی

A double gate normally-off silicon carbide (SiC) trench junction field effect transistors (JFET) design is considered. Innovative migration enhanced embedded epitaxial (ME3) growth process was developed to replace the implantation process and realize high device performance. Strong anisotropic behavior in electrical characteristics of the pn junction fabricated on (1 1 −2 0) and (1 −1 0 0) trench a-planes was observed, although quality of the pn diodes was found to be independent of trench plane orientations. Fabricated normally-off trench 4H-SiC JFET demonstrates the potential for lower specific on-resistance (RonS) in the range of 5–10 mΩ cm2 (1200 V class). A relative high T−2.6 dependence of RonS is observed. A breakdown voltage of 400 V in the avalanche mode was confirmed at zero gate bias conditions for cell design without edge termination. It was demonstrated that the normally-off JFETs are suitable for high temperature applications. Average temperature coefficient of threshold voltage (Vth) was calculated as −1.8 mV/°C, which is close to the MOS based Si power devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 83, Issue 1, January 2006, Pages 107–111
نویسندگان
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