کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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540285 | 1450385 | 2012 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Electrical and physical properties of HfO2 as gate dielectrics using various thickness of TaN electrodes for MIS capacitors Electrical and physical properties of HfO2 as gate dielectrics using various thickness of TaN electrodes for MIS capacitors](/preview/png/540285.png)
MIS capacitors with 16-nm high-k dielectric HfO2 and 50–150 nm TaN electrode were studied after post-metal-annealing (PMA) at various conditions. The effect of TaN thickness on electrical and physical properties is summarized. It has been found that the thermal stability of the TaN/HfO2 depends on TaN thickness. A reduction of leakage current and an increase of breakdown voltage were obtained with 50-nm TaN after PMA at 500 °C. The interface quality and the time-dependent dielectric breakdown (TDDB) characteristics were also improved. On the other hand, degradation after PMA was observed in HfO2 capped with 100-nm and 150-nm TaN.
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► TaN/HfO2 MIS capacitors with TaN thicknesses of 50–150 nm were characterized.
► Optimization of TaN metal thickness and PMA temperature is important.
► 50-nm TaN after 500–600 °C PMA exhibits the best electrical and thermal properties.
Journal: Microelectronic Engineering - Volume 96, August 2012, Pages 61–66