کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5403130 1392752 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy
چکیده انگلیسی
A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 129, Issue 9, September 2009, Pages 1073-1077
نویسندگان
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