کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5403130 | 1392752 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy](/preview/png/5403130.png)
چکیده انگلیسی
A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110Â meV. The possible origins of the two main peaks at around 1.6 and 1.8Â eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 129, Issue 9, September 2009, Pages 1073-1077
Journal: Journal of Luminescence - Volume 129, Issue 9, September 2009, Pages 1073-1077
نویسندگان
Bi Zhou, Shuwan Pan, Songyan Chen, Cheng Li, Hongkai Lai, Jinzhong Yu, Xianfang Zhu,