کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5403260 | 1392755 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of As doping on the photoluminescence of nanocrystalline 74Ge embedded in SiO2 matrix
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of As doping on the photoluminescence of nanocrystalline 74Ge embedded in SiO2 matrix Effect of As doping on the photoluminescence of nanocrystalline 74Ge embedded in SiO2 matrix](/preview/png/5403260.png)
چکیده انگلیسی
Samples of nanocrystalline 74Ge embedded in amorphous SiO2 film were prepared by 74Ge ion implantation and subsequent primary thermal annealing. These samples were irradiated by neutron flux in a nuclear reactor then the second annealing followed. Irradiation with thermal neutrons leads to doping of nanocrystalline 74Ge with As impurities due to nuclear transmutation of isotope 74Ge into 75As. Transmission electron microscope, X-ray fluorescence, X-ray photoelectron spectroscopy, laser Raman scattering and photoluminescence of the obtained samples were measured. It was observed that with the increase in As-donors concentration, photoluminescence intensity first increased but then significantly decreased. An explanatory model of this non-monotonic behavior was discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 128, Issue 8, August 2008, Pages 1363-1368
Journal: Journal of Luminescence - Volume 128, Issue 8, August 2008, Pages 1363-1368
نویسندگان
Shaobo Dun, Tiecheng Lu, Youwen Hu, Qiang Hu, Liuqi Yu, Zheng Li, Ningkang Huang, Songbao Zhang, Bin Tang, Junlong Dai, Lev Resnick, Issai Shlimak,