کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5404179 | 1505932 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence spectra of nano-structured ZnO thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The nano-structured ZnO thin film has been grown by molecular beam epitaxy on an Si (1Â 0Â 0) substrate. The emission spectra of ZnO samples were measured with the photon counting method in the temperature range from 18 to 140Â K by using the synchrotron radiation up to the vacuum ultraviolet region. Under the excitation of 196Â nm, two main emission bands have been observed, which peak at 330 and 430Â nm approximately. The 330Â nm emission band is due to the radiative recombination of excitons in surfaces associated with the O 2p dangling-bond state, and the 430Â nm band is attributed to the deep-level emission, which is related to oxygen vacancy defects. The temperature dependence of these two emission bands and the influence of the sample's annealing on the emission spectrum support our suggestions about the origin of the 330Â nm emission band as well as the 430Â nm one.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volumes 119â120, JulyâOctober 2006, Pages 233-236
Journal: Journal of Luminescence - Volumes 119â120, JulyâOctober 2006, Pages 233-236
نویسندگان
Yu Feng, Yingxue Zhou, Yaoqing Liu, Guobin Zhang, Xinyi Zhang,