The influence of crystallinity on the resistive switching behavior of TiO2

The resistive switching characteristics of Pt/TiO2/Al devices were investigated. Amorphous and rutile TiO2 samples were prepared and electrically characterized. The amorphous sample was sputtered at room temperature. The rutile phase of the TiO2 was prepared by sputtering at elevated temperatures of 500 °C. Without an electroforming process, the amorphous sample showed bipolar resistive switching in low current mode. Switchable rectifying effects have been demonstrated in this mode. After applying the electroforming process on the rutile or amorphous device both samples exhibited a bipolar switching in high current mode. Amorphous titanium oxide showed low and high current mode bipolar switching in one device.

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► We showed different switching behavior of amorphous and rutile TiO2.
► Amorphous sample showed switching without forming as well as after forming.
► Switchable rectifying effects have been demonstrated.
► Rutile TiO2 showed switching only after forming.