کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540472 | 871316 | 2011 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Enhanced operation and retention characteristics in charge-trapping flash memory device with a novel Si/Ge super-lattice channel Enhanced operation and retention characteristics in charge-trapping flash memory device with a novel Si/Ge super-lattice channel](/preview/png/540472.png)
Charge-trapping flash memory devices with super-lattice channels having different stacking structures and thicknesses of Ge top-layer are investigated in this work. Both programming and erasing speeds are significantly improved for devices with super-lattice channels. Programming speed increases with increasing thickness of Ge layer in the super-lattice channel. The enhancement on programming speed can be achieved up to 40 times or better. For devices with Ge top-layer on super-lattice channel, a further enhancement is observed with increasing Ge thickness. The retention characteristic of devices with super-lattice channel is better than that with Si-channel devices owing to the slightly increased thickness of tunneling oxide.
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Journal: Microelectronic Engineering - Volume 88, Issue 7, July 2011, Pages 1159–1163