Optimization of hafnium oxide for use in nanoparticle memories

In this work we investigate the dielectric properties of hafnium oxide deposited by RF magnetron sputtering with the purpose to implement it as control oxide for non-volatile memories based on metallic nanoparticles as charge storage centers. The influence of deposition temperature, ambient and post-deposition annealing onto the trapping properties of hafnium oxide, deposited over a tunneling silicon oxide layer, will be discussed and optimized conditions under which no charge trapping is observed into the dielectric stack will be presented.

Optimized MOS capacitor structures fabricated depositing hafnium oxide films at 300 °C by RF sputtering in Argon-Oxygen mixture present negligible hysteresis and trap related phenomena compared to non-optimized ones.Figure optionsDownload as PowerPoint slide