کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540518 871316 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Transport and interface states in high-κ LaSiOx dielectric
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Transport and interface states in high-κ LaSiOx dielectric
چکیده انگلیسی

The paper presents the results of capacitance–voltage, conductance-frequency and current–voltage characterization in the wide temperature range (140–300 K) as well as results of low temperature (5–20 K) thermally stimulated currents (TSC) measurements of metal–oxide-semiconductor (MOS) structures with a high-κ LaSiOx dielectric deposited on p- and n-type Si(1 0 0) substrate. Interface states (Dit) distribution determined by several techniques show consistent result and demonstrates the adequacy of techniques used. Typical maxima of interface states density were found as 4.6 × 1011 eV−1cm−2 at 0.2 eV and 7.9 × 1011 eV−1cm−2 at 0.77 eV from the silicon valence band. The result of admittance spectroscopy showed the presence of local states in bandgap with activation energy Ea = 0.38 eV from silicon conductance band, which is in accord with interface states profile acquired by conductance method. Low-temperature TSC spectra show the presence of shallow traps at the interface with activation energies ranging from 15 to 32 meV. The charge carrier transport through the dielectric film was found to occur via Poole–Frenkel mechanism at forward bias.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 7, July 2011, Pages 1342–1345
نویسندگان
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