کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540563 | 871324 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A flip-chip packaged 80-nm In0.7Ga0.3As MHEMT for millimeter-wave low-noise applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper, we present a flip-chip 80-nm In0.7Ga0.3As MHEMT device on an alumina (Al2O3) substrate with very little decay on device RF performance up to 60 GHz. After package, the device exhibited high IDS = 435 mA/mm at VDS = 1.5 V, high gm = 930 mS/mm at VDS = 1.3 V, the measured gain was 7.5 dB and the minimum noise figure (NFmin) was 2.5 dB at 60 GHz. As compared to the bare chip, the packaged device exhibited very small degradation in performance. The result shows that with proper design of the matching circuits and packaging materials, the flip-chip technology can be used for discrete low noise FET package up to millimeter-wave range.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 2, February 2011, Pages 183–186
Journal: Microelectronic Engineering - Volume 88, Issue 2, February 2011, Pages 183–186
نویسندگان
Chin-Te Wang, Chien-I Kuo, Heng-Tung Hsu, Edward Yi Chang, Li-Han Hsu, Wee-Chin Lim, Che-Yang Chiang, Szu-Ping Tsai, Guo-Wei Huang,