کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540563 871324 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A flip-chip packaged 80-nm In0.7Ga0.3As MHEMT for millimeter-wave low-noise applications
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
A flip-chip packaged 80-nm In0.7Ga0.3As MHEMT for millimeter-wave low-noise applications
چکیده انگلیسی

In this paper, we present a flip-chip 80-nm In0.7Ga0.3As MHEMT device on an alumina (Al2O3) substrate with very little decay on device RF performance up to 60 GHz. After package, the device exhibited high IDS = 435 mA/mm at VDS = 1.5 V, high gm = 930 mS/mm at VDS = 1.3 V, the measured gain was 7.5 dB and the minimum noise figure (NFmin) was 2.5 dB at 60 GHz. As compared to the bare chip, the packaged device exhibited very small degradation in performance. The result shows that with proper design of the matching circuits and packaging materials, the flip-chip technology can be used for discrete low noise FET package up to millimeter-wave range.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 2, February 2011, Pages 183–186
نویسندگان
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