کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540565 871324 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrochemical investigations for copper electrodeposition of through-silicon via
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Electrochemical investigations for copper electrodeposition of through-silicon via
چکیده انگلیسی

This study uses electrochemical techniques with a rotating disk electrode (RDE) to investigate the effects of Cu2+ concentration and additives on electrodeposition of through-silicon vias (TSV). The plating bath with both PEG and SPS has an obvious suppression effect on Cu-RDE with a thin boundary layer from −350 to −634 mV (vs. Hg/Hg2SO4) and a wide potential range for the via-filling operation. The impedance and potentiodynamic scans show the adsorption of small molecule SPS is more stable than PEG, and the effect of PEG or SPS depends on the thickness of boundary layer obviously only in Tafel region. This study obtained high filling powers in both deep and shallow vias using the plating bath of 50 g/L Cu2+, and TSV filling in wafer-segment scale, with 20 μm via diameter and 100 μm via depth, verifies the performance predicted by the electrochemical techniques.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 2, February 2011, Pages 195–199
نویسندگان
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