کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540601 871329 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
60Co gamma irradiation effects on electrical characteristics of Al/Y2O3/n-Si/Al capacitors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
60Co gamma irradiation effects on electrical characteristics of Al/Y2O3/n-Si/Al capacitors
چکیده انگلیسی

Al/Y2O3/n-Si/Al capacitors were irradiated by using a 60Co gamma ray source and a maximum dose up to 8.4 kGy. The effect of an annealing treatment performed at 600 or 900 °C on the yttrium oxide (Y2O3) films was investigated by XRD and Raman spectroscopy. High-frequency capacitance–voltage (C–V) and conductance–voltage (G–V) measurements as well as quasi-static measurements of the MOS structures were analysed. The annealing improves the crystalline state of the Y2O3 thin film material and decreases the values of the flat-band voltage and of the interface trap level density indicating an improvement of the electrical properties of the interface thin film–substrate. But at this interface, the formation of an yttrium-silicate layer was also evidenced. After gamma irradiation, the values of the flat-band voltage and of the interface trap level density related to the Al/Y2O3/n-Si/Al structure increase and especially for the structure made with the materials annealed at 900 °C for 1 h. In that case, the structure is very sensitive to a gamma irradiation dose up to 8.4 kGy.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 11, November 2010, Pages 2158–2162
نویسندگان
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