کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540626 | 871329 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of the effects of process-induced disorder location on planar photonic crystal waveguide properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The effects of process-induced disorder location on planar photonic crystal waveguide properties are numerically investigated using three-dimensional finite difference time domain simulation by introducing random fluctuations of the hole radius, size, position, and shape of air-holes of two-dimensional planar photonic crystal slab. Results reveal that bandgap properties are extremely robust with respect to disorder. It is shown that the very first rows of holes play a major role in the amount of disorder-induced optical loss, and that keeping the first two rows of holes unchanged leads to a blue-shift of slow light waveguide properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 11, November 2010, Pages 2301–2305
Journal: Microelectronic Engineering - Volume 87, Issue 11, November 2010, Pages 2301–2305
نویسندگان
Ran Hao, Eric Cassan, Xinliang Zhang, Dingshan Gao,