کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540626 871329 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation of the effects of process-induced disorder location on planar photonic crystal waveguide properties
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Investigation of the effects of process-induced disorder location on planar photonic crystal waveguide properties
چکیده انگلیسی

The effects of process-induced disorder location on planar photonic crystal waveguide properties are numerically investigated using three-dimensional finite difference time domain simulation by introducing random fluctuations of the hole radius, size, position, and shape of air-holes of two-dimensional planar photonic crystal slab. Results reveal that bandgap properties are extremely robust with respect to disorder. It is shown that the very first rows of holes play a major role in the amount of disorder-induced optical loss, and that keeping the first two rows of holes unchanged leads to a blue-shift of slow light waveguide properties.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 11, November 2010, Pages 2301–2305
نویسندگان
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