کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540628 | 871329 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles](/preview/png/540628.png)
چکیده انگلیسی
In this paper, we report on the applicability of gas phase synthesized ZnO nanoparticles for printed electronics. Electrical characteristics of thin film transistors with an active layer based on ZnO nanoparticle dispersions are presented. A low charge carrier mobility and a low Ion/Ioff ratio are found for the devices when measured in nitrogen atmosphere. The mobility is limited by the rough interface between semiconductor and dielectric. Additional electrical measurements in dry air reveal a dependency of the Ion/Ioff ratio on surface states of the ZnO particles. It is shown that adsorption of oxygen on ZnO nanoparticles leads to improved transistor characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 11, November 2010, Pages 2312–2316
Journal: Microelectronic Engineering - Volume 87, Issue 11, November 2010, Pages 2312–2316
نویسندگان
S. Walther, S. Schäfer, M.P.M. Jank, H. Thiem, W. Peukert, L. Frey, H. Ryssel,