کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540636 | 871329 | 2010 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Source/drain optimization of underlapped lightly doped nanoscale double-gate MOSFETs Source/drain optimization of underlapped lightly doped nanoscale double-gate MOSFETs](/preview/png/540636.png)
The impact of the spacer length at the source (Ls) and drain (Ld) on the performance of symmetrical lightly-doped double-gate (DG) MOSFET with gate length L = 20 nm is analyzed, with the type and doping concentration of the spacers kept the same as in the channel material. Using the transport parameters extracted from experimental data of a double-gate FinFET, simulations were performed for optimization of the underlapped gate-source/drain structure. The simulation results show that the subthreshold leakage current is significantly suppressed without sacrificing the on-state current for devices designed with asymmetrical source/drain extension regions, satisfying the relations Ls = L/2 and Ld = L. In independent drive configuration, the top-gate response can be altered by application of a control voltage on the bottom-gate. In devices with asymmetrical source/drain extension regions, simulations demonstrate that the threshold voltage controllability is improved when the drain extension region length is increased.
Journal: Microelectronic Engineering - Volume 87, Issue 11, November 2010, Pages 2353–2357