کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540682 | 871333 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma](/preview/png/540682.png)
چکیده انگلیسی
Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N2 plasma. The thermal stability of the TaNx films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2059–2063
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2059–2063
نویسندگان
Qi Xie, Jan Musschoot, Christophe Detavernier, Davy Deduytsche, Roland L Van Meirhaeghe, Sven Van den Berghe, Yu-Long Jiang, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu,