کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540746 | 871339 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of strain-temperature stress on MOS structure with ultra-thin gate oxide
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A method called strain-temperature stress was adopted in this work to improve the quality of ultra-thin oxide on both MOS(p) and MOS(n) capacitors. MOS structures were baked at 100 °C under externally applied mechanical stress. Reduced gate leakage current, reduced interface trap density (Dit), and improved time-dependent-dielectric-breakdown (TDDB) characteristics were observed after tensile-temperature stress treatment without increasing the oxide thickness. On the contrary, compressive-temperature stress resulted in a degraded performance of MOS capacitors. Consequently, the tensile-temperature stress method is suggested as a possible technique to enhance the ultra-thin oxide quality of MOS structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 9, September 2008, Pages 1915–1919
Journal: Microelectronic Engineering - Volume 85, Issue 9, September 2008, Pages 1915–1919
نویسندگان
Chia-Nan Lin, Yi-Lin Yang, Wei-Ting Chen, Shang-Chih Lin, Kai-Chieh Chuang, Jenn-Gwo Hwu,