کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540776 871344 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Formation of Ni silicide at room temperature studied by laser atom probe tomography: Nucleation and lateral growth
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Formation of Ni silicide at room temperature studied by laser atom probe tomography: Nucleation and lateral growth
چکیده انگلیسی

The first stages of Ni silicides have been studied by laser assisted atom probe tomography. The observations were realized on a Ni alloyed with 5% of Pt film on (1 0 0)Si, at room temperature. Without any heating, it has been observed the formation of two phases with distinct compositions: a layer of relatively constant thickness about 2 nm, with a composition close to NiSi and a cluster of Ni2Si. These observations are in accordance with the nucleation followed by lateral growth model deduced from calorimetric measurement of silicides and intermetallics growth. The redistribution of Pt during the first stage of formation of the silicides has also been measured.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 84, Issue 11, November 2007, Pages 2517–2522
نویسندگان
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