کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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540795 | 871344 | 2007 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Surface properties restoration and passivation of high porosity ultra low-k dielectric (k ∼ 2.3) after direct-CMP Surface properties restoration and passivation of high porosity ultra low-k dielectric (k ∼ 2.3) after direct-CMP](/preview/png/540795.png)
Surface hydrophilisation and effective k-value degradation have been reported in literature after direct-CMP of high porosity SiOC films (without a protective capping layer). In the sequel, attempts to restore ultra low-k (ULK) material initial properties after a standard CMP and post-CMP cleaning process are reported. Annealing treatment has shown to be valuable to remove residual organics and water absorbed at the ultra low-k material surface after direct-CMP. However, as the hydrophilicity of the polished surface remains unchanged, it does not prevent moisture uptake, leading to an increase in k-value with time. Therefore, in order to restore hydrophobic properties and to stabilize the surface in time, three silylating agents – containing chlorosilane reactive groups (–SiMenCl3−n) as well as hydrophobic methyl functions (–CH3) in their structure – have been employed in liquid, gas or dense CO2 phases on the CMP-induced damaged ULK layers. While each of these organic treatments is efficient to restore hydrophobicity on post-CMP ULK surfaces, only one of them proved to be able to keep the k-value low (comparable to the ULK pristine k-value) and stable in time, without inducing significant change in porosity of the ULK material.
Journal: Microelectronic Engineering - Volume 84, Issue 11, November 2007, Pages 2620–2623