کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540809 | 871344 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Copper stress migration at narrow metal finger with wide lead
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Copper stress migration (SM) at narrow metal finger connected with wide lead is investigated in this work. Voiding phenomenon is explored with respect to specific failure site. Metal geometric factors including lead width, lead length and finger length are also discussed in terms of SM failure rates. Meanwhile, in order to study the failure mechanism, a finite element analysis (FEA) is conducted to evaluate the influences from vacancy migration path, hydrostatic stress gradient and different metal geometries. As a result, a characterization regarding SM at narrow metal finger with wide lead is obtained for the reference of reliability assessment and process improvement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 84, Issue 11, November 2007, Pages 2697–2701
Journal: Microelectronic Engineering - Volume 84, Issue 11, November 2007, Pages 2697–2701
نویسندگان
Robin C.J. Wang, K.S. Chang-Liao, A.S. Oates, C.C. Lee, L.D. Chen, C.C. Chiu, Kenneth Wu,