کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540815 871344 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis of low temperature RTP needs for IC metallization
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Analysis of low temperature RTP needs for IC metallization
چکیده انگلیسی

We discuss the desirable properties of an RTP tool and process for low temperature (<700 °C) applications. We contrast two different approaches for heating the substrates – a “cold-wall” system in which the energy is delivered as photons, and a “hot-wall” system where heat convection and conduction are the dominant heat transfer mechanism. We present arguments for why “hot-wall” systems have distinct advantages for most processes in the low temperature regime and demonstrate our conclusions on examples of Ni and Co silicidation process.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 84, Issue 11, November 2007, Pages 2729–2732
نویسندگان
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