کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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540891 | 1450400 | 2006 | 4 صفحه PDF | دانلود رایگان |
Extreme ultraviolet lithography (EUVL) is the leading lithography technology to fabricate critical feature sizes of 32 nm and smaller. For EUVL a Mo/Si multilayer-based reflective optical system is used and the development of suitable, defect-free mask blanks is the greatest challenge facing the commercialization of EUVL. In this paper we describe how a recently formed, state-of-the-art compositional analysis capability at the Mask Development Center at SEMATECH-North was utilized to identify the composition of defects in our process. This compositional information, coupled with tool and procedural upgrades based on best engineering practices and judgement, led to a decrease in the typical multilayer-coating-added defect density on 6 in. square quartz substrates by more than an order-of-magnitude, from ∼0.5 defects/cm2 to ∼0.028 defects/cm2 for particles ⩾80 nm in size (PSL equivalent). We have also obtained a “champion” mask blank with an added defect density of only ∼0.020 defects/cm2 for particles ⩾70 nm in size.
Journal: Microelectronic Engineering - Volume 83, Issues 4–9, April–September 2006, Pages 695–698