کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540961 | 1450400 | 2006 | 4 صفحه PDF | دانلود رایگان |

With shrinking feature sizes in lithography, molecular level phenomena such as line edge roughness have an increasingly important impact on process performance. The critical ionization model provides a molecular understanding of the resist development process that follows the exposure and post exposure bake steps. Applied to simulation, a major drawback of the critical ionization model is the vast increase in computing time required. This paper presents a fast, event-based algorithm with self-adaptive time-steps for the discrete simulation of the development process. Its additional advantage compared to previously employed time-step based algorithms is that it is free of numerical errors that result from the discretization of the simulated development time into fixed time-steps.
Journal: Microelectronic Engineering - Volume 83, Issues 4–9, April–September 2006, Pages 1008–1011