NV-center diamond cantilevers: Extending the range of available fabrication methods

• Existing technology for the fabrication of single crystal diamond cantilevers for magnetometry experiments is extended
• 30 kV electron beam lithography and standard reactive ion etching processes can be used
• A precise alignment method using two sets of marks is used for alignment on the backside of the sample
• A thin Ti layer underneath the resist promotes good adhesion for nanostructures and prevents charging during lithography

We present an alternative fabrication process for single crystal diamond cantilevers that consist of a platform carrying a nanopillar containing nitrogen vacancy centers close to its surface. These cantilevers are suitable for vector magnetometry by fitting them to the scanning unit of an atomic force microscope. Our methods extend existing technology to lower electron voltages (30 kV) and standard reactive ion etching. Special procedures are presented to overcome both restrictions due to charging of the diamond during electron beam lithography and limitations of the etch depth due to the low plasma density in reactive ion etching systems. The presence of nitrogen vacancy centers in the fabricated nanostructures is confirmed by photoluminescence measurements.

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