کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541121 | 1450322 | 2016 | 4 صفحه PDF | دانلود رایگان |
• ZnO nanoparticle TFTs were integrated on a freestanding flexible substrate (PET).
• Resolution (photolithography) of 1 μm with multiple layers was achieved.
• Integration process allows the fabrication of complex circuits.
• Maximum process temperature of 115 °C.
• Electrical and optical characteristics of the TFTs were evaluated.
Nowadays, transparent and flexible electronics allow the fabrication of several innovative products, from flexible displays to radio-frequency identification tags and wearable electronics. For this reason, this technology has gained the interest of several companies including the scientific community. In flexible microelectronic systems, thin-film transistors (TFTs) are the active elements switching the driving currents. Therefore, we present inverted coplanar ZnO nanoparticle TFTs on a freestanding polyethylene terephthalate (PET) substrate. For the active semiconductor deposition a spray-coating technique was used availing the process to large area substrates. The maximum process temperature was limited to 115 °C. Subsequently to the integration process, the electrical and optical characteristics of the transistors were evaluated.
Figure optionsDownload as PowerPoint slide
Journal: Microelectronic Engineering - Volume 159, 15 June 2016, Pages 155–158