کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541377 871463 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic structure of Pt/HfO2 interface with oxygen vacancy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Electronic structure of Pt/HfO2 interface with oxygen vacancy
چکیده انگلیسی

Using first-principles calculations, we study the electronic structures of Pt/HfO2 interface in the presence of oxygen vacancy. The energetics and charge transfer are examined when the oxygen vacancy is at various distances from the interface. It is found that the oxygen vacancy is strongly attracted to the interface and the charge transfer decreases monotonically as the vacancy moves away from the interface, albeit the amount of charge transfer is small. The charge transfer results in the decrease of the effective work function of Pt, consistent with the vacancy mechanism to explain the shift in the flat-band voltage.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 12, December 2011, Pages 3407–3410
نویسندگان
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