کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541525 | 1450395 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Step and flash imprint lithography for quantum dots based room temperature single electron transistor fabrication
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In this work we demonstrate the successful fabrication using step and flash imprint lithography – reverse tone (SFIL-R)™ coupled with a novel Focus ion beam (FIB) quantum dot (QD) deposition technique to produce of a full array of room temperature single electron transistors (RT-SET) based on tungsten quantum dot arrays. The integration of SFIL-R and FIB technology process flow has been developed in order to explore the possibility of an ultra low power, monolithically integrated nano-electronics circuits using RT-SET. We describe the parallel production of RT-SET devices using SFIL-R. The yield of the mass produced devices are examined. These QD based devices are characterized and initial results are evaluated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issues 4–6, April–June 2009, Pages 646–649
Journal: Microelectronic Engineering - Volume 86, Issues 4–6, April–June 2009, Pages 646–649
نویسندگان
Daw Don Cheam, P. Santosh Kumar Karre, Marylene Palard, Paul L. Bergstrom,